Chemical vapor deposition apparatus and method of forming thin layer using same

摘要

In one embodiment, a chemical vapor deposition (CVD) apparatus comprising a plurality of backside gas (BSG) passages that pass through a heater table that controls a temperature of a plurality of local areas on a wafer and a method of forming a thin layer using the CVD apparatus are provided. The heater table comprises a wafer supporting area divided into a plurality of local areas that correspond to the local areas of the wafer. Each of the BSG passages has a BSG outlet that supplies the BSG, heated by a heater, to the local areas. Flow controllers control the flow through each of the BSG passages, thereby controlling the temperature of local areas.