| 摘要 |
<p>A backside-illuminated photodetector is disclosed which enables to sufficiently reduce the package size and is capable to suppress scattering of light to be detected. A backside-illuminated photodiode (1) comprises an N-type semiconductor substrate (10), a P<+>-type impurity semiconductor region (11), a recessed portion (12), a coating layer (13), and a window plate (14). The P<+>-type impurity semiconductor region (11) is formed in a surface layer on the front side (S1) of the N-type semiconductor substrate (10). The recessed portion (12), on which a light to be detected is incident, is formed in a region on the backside (S2) of the N-type semiconductor substrate (10) which region is opposite to the P<+>-type impurity semiconductor region (11). The backside (S2) is also provided with the coating layer (13), which has a substantially flat surface. The window plate (14) is formed on the coating layer (13).</p> |
