<p>Sintered silicon nitride products comprising predominantly beta-silicon nitride grains in combination with from about 0.1 to 30 mole % silicon carbide, and grain boundary secondary phases of scandium oxide and scandium disilicate. Such products have high fracture toughness, resistance to recession, and resistance to oxidation at temperatures of at least 1500°C. Methods for preparing sintered silicon nitride products are also disclosed.</p>
申请公布号
WO2005009920(A1)
申请公布日期
2005.02.03
申请号
WO2004US22864
申请日期
2004.07.15
申请人
HONEYWELL INTERNATIONAL INC.;LI, CHIEN-WEI;GUIHEEN, JAMES, V.;SCHENK, BJOERN