发明名称 METHOD AND APPARATUS OF GENERATING GAS PLASMA, GAS COMPOSITION OF GENERATING PLASMA AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME FOR ENHANCING PRODUCTIVITY BY USING REMOTE METHOD
摘要 PURPOSE: A method and an apparatus of generating gas plasma, a gas composition of generating plasma, and a method of fabricating a semiconductor device using the same are provided to enhance productivity by improving efficiency of generation and reducing a generating period in a plasma generating process using a remote method. CONSTITUTION: A first electric field(48a) is generated at a plasma generating member or a gas floating member(43) by an RF current supplied from a power supply unit(45). A second electric field(48b) is generated at the plasma generating member or the gas floating member by a main magnetic field forming part and an auxiliary magnetic field forming part. The first electric field and the second electric field cross at right angles within the plasma generating member or the gas floating member. The radical atmosphere is formed within the plasma generating member or the gas floating member by the first electric field and the second electric field.
申请公布号 KR20050013187(A) 申请公布日期 2005.02.03
申请号 KR20040114006 申请日期 2004.12.28
申请人 NEW POWER PLASMA CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. 发明人 BAE, DO IN;CHOI, DAE KYU;HWANG, WAN GOO;KIM, JIN MAN;MIN, YOUNG MIN;YANG, YUN SIK
分类号 H05H1/30 主分类号 H05H1/30
代理机构 代理人
主权项
地址