| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of correcting the distortion of a pattern image projected in an imaging process and decreasing an overlay error, when the pattern is overlaid on a substrate by a lithography projection apparatus. SOLUTION: The pattern is arranged on a mask, and the image is made by using a part of a projection system. The imaging quality of the part of the projection system is described by an imaging quality parameter, the image can be adjusted by an image tuning parameter in the projection system. An ideal image of a projection pattern is decided, a distorted image of the pattern which is simulated on the basis of the imaging quality parameter is decided, the deflection between the simulated image and the ideal image is decided, the image tuning parameter is corrected and changed in the imaging process in order to minimize deflection, and the distortion of the image is decreased. COPYRIGHT: (C)2005,JPO&NCIPI |
