| 摘要 |
PROBLEM TO BE SOLVED: To prevent the increase of contact resistance and to improve the yield by suppressing the anode oxidation of a TiN layer on the bottom of a via hole for connection with aluminum wiring, when the via hole is formed. SOLUTION: The temperature in sputtering a titanium film is set to≥200°C and≤225°C, thereby film properties are made highly resistant against oxidation (step 11). UV irradiation is performed before coating a photoresist for etching a via hole to reduce the number of plus charges (step 12), a nitrogen plasma treatment is performed at the via hole etching and after plasma separation to reduce the number of plus charges (step 13, 14), and concentration management is performed such that the resistivity value of rinse water is≤0.3 MΩcm during the organic separation. Furthermore, a sputtering level is made≥18 nm and≤22 nm in the RF sputtering of a barrier metal layer, thereby a TiO<SB>n</SB>film being removed (step 16). COPYRIGHT: (C)2005,JPO&NCIPI
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