发明名称 SUBSTRATE TREATMENT EQUIPMENT AND SUBSTRATE TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To conduct a heat treatment having a high accuracy in a short time when a substrate is placed on a substrate placing section, the temperature of the substrate is stabilized at an aimed process temperature and the specified heat treatment (a heating or a cooling) is conducted. SOLUTION: Substrate treatment equipment is constituted so that a first power command value is output to a power supply section supplying a heat supply section with a power on the basis of a preset output pattern while a second power command value smaller than the first power command value is output and the control is changed over to a PID control when or immediately before the substrate is placed on the substrate placing section. The temperature of the substrate placing section, in which a heat is robbed by the substrate and the temperature is lowered, can be returned quickly in this case, and the temperature can be stabilized rapidly. It is preferable that an integral element and a differential element are obtained previously before the control is changed over to the PID control, and that a PID arithemtic operation is conducted by using the values of the elements when the control is changed over to the PID control. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005033178(A) 申请公布日期 2005.02.03
申请号 JP20040136555 申请日期 2004.04.30
申请人 TOKYO ELECTRON LTD 发明人 SHIGETOMI KENICHI;SATA NOBUYUKI;TAKEI TOSHICHIKA;KANEDA MASATOSHI
分类号 H05B3/00;H01L21/00;H01L21/027;H01L21/687;(IPC1-7):H01L21/027 主分类号 H05B3/00
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