发明名称 SOLID IMAGE IMAGE SENSOR, AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a solid image image sensor having a high sensitivity wherein the feeding of hydrogen to its substrate which is necessary for reducing its dark current is performed effectively without damaging substantially the anti-reflecting effect of its anti-reflection film, and the image quality of its output image is good. SOLUTION: The solid image image sensor has a semiconductor substrate 1, a plurality of light receiving portions 2 formed in the semiconductor substrate, and an anti-reflection film 6 formed on each light receiving portion. The anti-reflection film has an opening 6a in a portion present on each light receiving portion. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005033110(A) 申请公布日期 2005.02.03
申请号 JP20030272981 申请日期 2003.07.10
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SUZUKI MASAKATSU
分类号 H01L27/14;H04N5/335;H04N5/361;H04N5/369;H04N5/372;(IPC1-7):H01L27/14 主分类号 H01L27/14
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