| 摘要 |
PROBLEM TO BE SOLVED: To form a ferroelectric film in a bismuth layer structure by using low temperature crystallization in the MOCVD process. SOLUTION: The method for forming a ferroelectric film in a bismuth layer structure has a step of introducing at least a first raw material gas comprising a first organic metal compound described by the formula: A[Bi(OR<SP>1</SP>)(OR<SP>2</SP>)(OR<SP>3</SP>)(OR<SP>4</SP>)]<SB>2</SB>, a second raw material gas comprising a second organic metal compound described by the formula: B(OR<SP>5</SP>)(OR<SP>6</SP>)(OR<SP>7</SP>)(OR<SP>8</SP>)(OR<SP>9</SP>), and an oxidizing gas, into a treatment chamber for film formation by metal-organic chemical vapor deposition. COPYRIGHT: (C)2005,JPO&NCIPI
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