| 发明名称 |
Method for fabricating poly patterns |
| 摘要 |
A method of fabricating polysilicon patterns. The method includes depositing polysilicon on a substrate. The polysilicon may be doped or pre-doped depending upon the application. A mask layer is applied and patterned. Thereafter, the polysilicon is etched to form the polysilicon patterns and an oxidizing step is performed. The mask layer is removed after the oxidizing step is performed.
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| 申请公布号 |
US2005026406(A1) |
申请公布日期 |
2005.02.03 |
| 申请号 |
US20030631251 |
申请日期 |
2003.07.31 |
| 申请人 |
HAO CHING-CHEN;LIN HUNG-JEN;CHI MIN-HWA;SHEN CHIH-HENG |
发明人 |
HAO CHING-CHEN;LIN HUNG-JEN;CHI MIN-HWA;SHEN CHIH-HENG |
| 分类号 |
H01L21/027;H01L21/28;H01L21/283;H01L21/31;H01L21/3213;H01L21/336;H01L21/4763;H01L21/8234;H01L21/8238;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/027 |
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