发明名称 |
Polishing slurry and method for chemical-mechanical polishing of copper |
摘要 |
The claimed invention involves a novel aqueous polishing slurry for chemical-mechanical polishing that is effective for polishing copper at high polish rates. The aqueous slurry according to the present invention comprises particles of MoO2 in an oxidizing agent. A method for polishing copper by chemical-mechanical polishing includes contacting copper with a polishing pad and an aqueous slurry comprising particles of MoO2 in an oxidizing agent.
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申请公布号 |
US2005022456(A1) |
申请公布日期 |
2005.02.03 |
申请号 |
US20030631698 |
申请日期 |
2003.07.30 |
申请人 |
BABU S. V.;HEGDE SHARATH;JHA SUNIL CHANDRA |
发明人 |
BABU S. V.;HEGDE SHARATH;JHA SUNIL CHANDRA |
分类号 |
C09G1/02;C09K3/14;C23F3/06;H01L21/321;(IPC1-7):B24D3/02 |
主分类号 |
C09G1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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