| 摘要 |
A semiconductor light emitting device comprises a semiconductor substrate, a semiconductor multi-layer, a first electrode and a second electrode. The semiconductor substrate is made of a material which is substantially transparent to a emission wavelength. The semiconductor multi-layer emits a light having the emission wavelength by a current injection. A major surface of the semiconductor multi-layer is bonded to a major surface of the semiconductor substrate and the major surface of the semiconductor substrate has a greater area than the major surface of the semiconductor multi-layer. The first electrode has an ohmic contact part and a light reflecting part. The first electrode is provided on an opposite major surface of the semiconductor multi-layer. A spacing between neighboring portions of the ohmic contact part is greater in an inner part of the first electrode and is smaller in an outer part of the first electrode. The second electrode is provided on an opposite surface of the semiconductor substrate. |
