发明名称 TEMPERATURE SENSING CIRCUIT AND METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a temperature sensing circuit and method for sensing accurately a temperature in an inside of a semiconductor device, and for digitalizing a result therein to be output. <P>SOLUTION: This temperature sensing circuit is provided with a temperature sensing part 210, a storage part 240, and a control part 250. The temperature sensing part 210 is constituted to output a temperature signal TS having information as to a relative level of the temperature in the inside of a semiconductor device with respect to a reference temperature, in response to the first current control signal CTRLS1 or the second current control signal CTRLS2, using the first current PTAT of which the current level is elevated by temperature elevation and the second current CTAT of which the current level is lowered by the temperature elevation. The storage part 240 outputs the temperature signal after stored, and the control part 250 changes the current level of the first current PTAT and the second current CTAT, in response to the temperature signal TS output from the storage part 240, so as to generate the first current control signal CTRLS1 or the second current control signal CTRLS2 for controlling the reference temperature. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005031077(A) 申请公布日期 2005.02.03
申请号 JP20040197113 申请日期 2004.07.02
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM KWANG-HYUN;KIM CHAN-KYUNG
分类号 G01K7/00;G01K7/01;H01L21/66;H03K17/08 主分类号 G01K7/00
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