| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can realize good alloy formation between a metal formed on a semiconductor substrate and a semiconductor material without involving the complication of device arrangement and process in order to reduce a risk of thermal cracking in the semiconductor substrate. SOLUTION: A temperature of a heater 24 is kept at a temperature enabling alloy formation between a metal and a semiconductor material, a substrate W is transported into a heating furnace 20, held above the heater 24 for a predetermined time, the substrate W is brought into contact with the heater 24 to form an alloy between the metal and the semiconductor material, the substrate W is moved away from the heater 24, the substrate W is held for a predetermined time above the heater 24, and then the substrate W is transported from the heating furnace 20 to an outside thereof for its cooling. COPYRIGHT: (C)2005,JPO&NCIPI |
