发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To suppress the kerf width and pitching generated when performing a dicing process using a laser beam. SOLUTION: When performing dicing of the laminate 15 after the completion of the wafer process, the laminate is first ground in advance to remove the electrode pad 16b formed on a silicon substrate 12 of a dicing region 20, and which is the constitution part of TEG and difficult to transmit the laser beam including the silicon oxidation film 14b and the passivation film 18b. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005032903(A) 申请公布日期 2005.02.03
申请号 JP20030194873 申请日期 2003.07.10
申请人 OKI ELECTRIC IND CO LTD 发明人 KANNO YOSHINORI
分类号 H01L21/301;H01L21/68;H01L21/78;H01L21/86;H01L23/544;H01L23/58;(IPC1-7):H01L21/301 主分类号 H01L21/301
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