| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having at least two MOS transistors formed on the same semiconductor substrate while differentiating the thickness of a gate oxide film. SOLUTION: When a transistor having a thin gate oxide film and a transistor having a thick gate oxide film are formed on the same semiconductor substrate, ions of fluorine or its compound are implanted into a gate electrode in a region for forming the transistor having a thick gate oxide film at the time of forming an LDD region or a source/drain region. Subsequently, heat treatment is performed in order to increase the thickness of a second oxide film thus forming a transistor having a thin gate oxide film and a transistor having a thick gate oxide film. COPYRIGHT: (C)2005,JPO&NCIPI
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