Fabrication of dielectric for a nonvolatile memory cell having multiple floating gates

摘要

A memory cell (110) has a select gate (140) and at least two floating gates (160). A gate dielectric (150) for the floating gates (160) is formed by thermal oxidation simultaneously with as a dielectric on a surface of the select gate (140). The dielectric thickness on the select gate is controlled by the dopant concentration in the select gate. Other features are also provided.