| 发明名称 |
Manufacturing method for semiconductor device |
| 摘要 |
The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation can be carried out without exposing TFTs to the air during the time from washing step to the film formation step and it becomes possible to maintain the cleanliness of the interfaces of each film which form the TFT.
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| 申请公布号 |
US2005026320(A1) |
申请公布日期 |
2005.02.03 |
| 申请号 |
US20040928271 |
申请日期 |
2004.08.30 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ASAMI TAKETOMI;ICHIJO MITSUHIRO;TORIUMI SATOSHI;OHTSKUKI TAKASHI;YAMAZAKI SHUNPEI |
| 分类号 |
H01L21/3213;H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/49;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/3213 |
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