| 摘要 |
The invention relates to a device and a method for machining the rear side of semiconductor chips. Said method comprises the steps of thinning the entire surface of a substrate of the semiconductor chip to obtain a first substrate thickness (S1), forming a first trench by means of focused ion beams to obtain a second substrate thickness (S2), forming a second trench within the first trench by means of focused ion beams to obtain a third substrate thickness (S3), whereby a trench isolation can be detected in the substrate, and, finally, fine-adjusting the semiconductor chip on the basis of a FIB image of the second trench and of a reference layout for a trench isolation of the semiconductor chip (S4). In this manner, circuit modifications can be made to the rear side of a semiconductor chip with an accuracy up to 25 nm. |
