| 摘要 |
<p>A magnetoresistive tunneling junction memory cell (<HIL><PDAT>10</BOLD><PDAT>) including a pinned ferromagnetic region (<HIL><PDAT>17</BOLD><PDAT>) having a magnetic moment vector (<HIL><PDAT>47</BOLD><PDAT>) fixed in a preferred direction in the absence of an applied magnetic field wherein the pinned ferromagnetic region has a magnetic fringing field (<HIL><PDAT>96</BOLD><PDAT>), an electrically insulating material positioned on the pinned ferromagnetic region to form a magnetoresistive tunneling junction (<HIL><PDAT>16</BOLD><PDAT>), and a free ferromagnetic region (<HIL><PDAT>15</BOLD><PDAT>) having a magnetic moment vector (<HIL><PDAT>53</BOLD><PDAT>) oriented in a position parallel or anti-parallel to that of the pinned ferromagnetic region wherein the magnetic fringing field is chosen to obtain a desired switching field.</PTEXT></p> |
