| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming metal wiring for a semiconductor element by which the contact resistance between a metal plug and metal wiring can be improved by preventing the contact area between the plug and wiring from decreasing by a parasitic spacer between the plug and wiring. SOLUTION: The method of forming metal wiring includes a step of successively forming a first interlayer insulating film, an etching stop layer, and a second interlayer insulating film on a semiconductor substrate on which a prescribed semiconductor structural layer is formed, a step of forming a contact hole in which part of the semiconductor structural layer is exposed by performing an etching step by using an etching mask for the contact hole, and a step of forming a metal plug so as to fill the contact hole. The method also includes a step of successively forming a diffusion preventing film and a third interlayer insulating film on the whole structure and an etching step performed by using an etching mask for trenches. The etching step includes a step of forming a trench by over-etching the second interlayer insulating film by using the etching stop layer as an etching barrier and a step of forming the metal wiring so as to fill the trench. COPYRIGHT: (C)2005,JPO&NCIPI
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