发明名称 |
THYRISTOR-BASED SRAM AND METHOD FOR THE FABRICATION THEREOF |
摘要 |
A method for manufacturing an integrated circuit structure includes providing a semiconductor substrate and forming a thyristor thereon. The thyristor has at least four layers, with three P-N junctions therebetween. At least two of the layers are formed horizontally and at least two of the layers are formed vertically. A gate is formed adjacent at least one of the vertically formed layers. An access transistor is formed on the semiconductor substrate, and an interconnect is formed between the thyristor and the access transistor.
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申请公布号 |
US2005026337(A1) |
申请公布日期 |
2005.02.03 |
申请号 |
US20030628912 |
申请日期 |
2003.07.28 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
QUEK ELGIN;YELEHANKA PRADEEP RAMACHANDRAMURTHY;ZHENG JIA ZHEN;LAI TOMMY;LI WEINING |
分类号 |
H01L21/332;H01L21/8244;H01L27/11;(IPC1-7):H01L21/332 |
主分类号 |
H01L21/332 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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