| 摘要 |
A semiconductor memory device includes a semiconductor substrate, a transistor formed on the semiconductor substrate, and having a gate electrode and first and second diffusion layers, a first insulating film formed on the transistor, a first multi-layer interconnect layer formed in the first insulating film, and including a plurality of interconnect layers and contacts, a first recessed portion formed to continuously and vertically penetrate the first insulating film including at least two layers of the first multi-layer interconnect layer, and arranged so that at least part of the first recessed portion overlaps with the gate electrode, and a ferroelectric capacitor three-dimensionally formed in the first recessed portion, and having first and second electrodes and a ferroelectric film, the first electrode being electrically connected with the first diffusion layer.
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