发明名称 |
Semiconductor light emitting device and its manufacturing method |
摘要 |
In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer, the p-side cladding layer is made of an undoped or n-type first layer 9 and a p-type second layer 12 that are deposited sequentially from nearer to remoter from the active layer. The first layer 9 is not thinner than 50 nm. The p-type second layer 12 includes a p-type third layer having a larger band gap inserted therein as an electron blocking layer. Thus the semiconductor light emitting device is reduced in operation voltage while keeping a thickness of the p-side cladding layer necessary for ensuring favorable optical properties.
|
申请公布号 |
US2005023541(A1) |
申请公布日期 |
2005.02.03 |
申请号 |
US20040930009 |
申请日期 |
2004.08.30 |
申请人 |
TAKEYA MOTONOBU;ASANO TAKEHARU;IKEDA MASAO |
发明人 |
TAKEYA MOTONOBU;ASANO TAKEHARU;IKEDA MASAO |
分类号 |
H01L33/00;H01L33/04;H01L33/06;H01L33/32;H01S5/02;H01S5/20;H01S5/32;H01S5/323;H01S5/343;(IPC1-7):H01S5/00 |
主分类号 |
H01L33/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|