发明名称 |
Temperature optimization of a physical vapor deposition process |
摘要 |
A physical vapor deposition process for maintaining the wafer below a critical temperature. The rate at which material particles are sputtered from the target and thus deposited on the wafer is controllable in response to power supplied to the target. Maintaining a desired deposition rate maintains the wafer temperature below the critical temperature.
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申请公布号 |
US2005023133(A1) |
申请公布日期 |
2005.02.03 |
申请号 |
US20030633334 |
申请日期 |
2003.08.01 |
申请人 |
LIPPITT MAXWELL W.;CLABOUGH CRAIG G.;BUCKFELLER JOSEPH W.;DANIEL TIMOTHY J. |
发明人 |
LIPPITT MAXWELL W.;CLABOUGH CRAIG G.;BUCKFELLER JOSEPH W.;DANIEL TIMOTHY J. |
分类号 |
C23C14/35;C23C14/54;H01L21/285;H01L21/768;(IPC1-7):H01L21/320;H01L21/00;H01L21/44;C23C14/32;C23C14/00;H01L21/476 |
主分类号 |
C23C14/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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