发明名称 Temperature optimization of a physical vapor deposition process
摘要 A physical vapor deposition process for maintaining the wafer below a critical temperature. The rate at which material particles are sputtered from the target and thus deposited on the wafer is controllable in response to power supplied to the target. Maintaining a desired deposition rate maintains the wafer temperature below the critical temperature.
申请公布号 US2005023133(A1) 申请公布日期 2005.02.03
申请号 US20030633334 申请日期 2003.08.01
申请人 LIPPITT MAXWELL W.;CLABOUGH CRAIG G.;BUCKFELLER JOSEPH W.;DANIEL TIMOTHY J. 发明人 LIPPITT MAXWELL W.;CLABOUGH CRAIG G.;BUCKFELLER JOSEPH W.;DANIEL TIMOTHY J.
分类号 C23C14/35;C23C14/54;H01L21/285;H01L21/768;(IPC1-7):H01L21/320;H01L21/00;H01L21/44;C23C14/32;C23C14/00;H01L21/476 主分类号 C23C14/35
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