| 发明名称 |
Method for slowing down dopant-enhanced diffusion in substrates and devices fabricated therefrom |
| 摘要 |
A method (and resulting structure) of forming a semiconductor device, includes implanting, on a substrate, a dopant and at least one species, annealing the substrate, the at least one species retarding a diffusion of the dopant during the annealing of the substrate.
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| 申请公布号 |
US2005026403(A1) |
申请公布日期 |
2005.02.03 |
| 申请号 |
US20030627753 |
申请日期 |
2003.07.28 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LEE KAM-LEUNG;ZHU HUILONG |
| 分类号 |
H01L21/265;H01L21/324;H01L21/336;H01L29/10;(IPC1-7):H01L21/336;H01L21/425 |
主分类号 |
H01L21/265 |
| 代理机构 |
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代理人 |
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| 主权项 |
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