| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with a structure capable of avoiding the occurrence of a short circuit between cylindrical storage nodes even when the height of the cylindrical storage node is increased to increase the capacity of a capacitor. <P>SOLUTION: An insulating member 54A composed of a silicon nitride film is provided on the outer peripheral rim of the upper end of the storage node 34A so as to surround the outer peripheral rim. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
