发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device having high reliability wherein a semiconductor element can be operated at a high temperature. SOLUTION: The semiconductor device comprises an insulation substrate 1, semiconductor elements 3 located on one side face of the insulation substrate 1 via a metal layer 2, a heat insulation layer 11 so formed as to cover the surface of the semiconductor elements 3, a heat sink 5 which is so located that one side face may be bonded to the other side face of the insulation substrate 1, and a case 6 which is so mounted on the heat sink 5 as to surround the insulation substrate 1, the semiconductor elements 3, and the heat insulation layer 11, with the inside being filled up with a filler 9. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005032879(A) 申请公布日期 2005.02.03
申请号 JP20030194515 申请日期 2003.07.09
申请人 TOSHIBA CORP 发明人 SHIMIZU TOSHIO;SEKIYA HIRONORI;HIRAMOTO HIROYUKI;MATSUMOTO HISAAKI;SAITO SUZUO;YOSHINO TERUO
分类号 H01L23/28;H01L23/29;H01L23/31;H01L23/34;(IPC1-7):H01L23/28 主分类号 H01L23/28
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