| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method which can attain miniaturization, regarding a semiconductor device in which underfill material is filled in a gap between a semiconductor chip and a solid state device. <P>SOLUTION: A slave chip 3 is bonded on a wafer W in which a plurality of regions corresponding to master chips 2 are formed densely, in such a manner that a gap S is formed between a wafer W and the slave chip 3 (a). Next, precursor 12 of the underfill material 7 which has thermosetting property is applied by a spin coat method on a surface where the slave chip 3 of the wafer is bonded. The gap S is filled with the precursor 12 by capillarity (b). Continuously, the surface on which the precursor 12 of the wafer W is applied is irradiated with ultraviolet ray (UV), and thermosetting property of the precursor 12 existing outside the gap S is lost (c). After that, the wafer W is heated, the precursor 12 in the gap S is cured and turned into underfill material. Non-cured precursor 12 existing outside the gap S is eliminated by developer (d). <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
