发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which can assure a large operating region (active region) by preventing an oscillation from occurring and to provide a method for manufacturing the same. SOLUTION: The semiconductor device includes an IGBT which has a plurality of divided active regions, which has a gate electrode 53 having an opening 21 for forming a current constriction part 22. This current constriction part 22 is utilized as an oscillation suppressing resistor of an LC circuit constituted of a gate capacity and a gate wiring 66, thereby preventing an oscillation phenomenon from occurring at the IGBT turning off time. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005032736(A) 申请公布日期 2005.02.03
申请号 JP20020168129 申请日期 2002.06.10
申请人 FUJI ELECTRIC HOLDINGS CO LTD 发明人 YOSHIKAWA ISAO
分类号 H01L29/78;H01L29/739;(IPC1-7):H01L29/78 主分类号 H01L29/78
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