| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an NAND type flash memory device capable of reducing the possibility of errors in a memory cell program which may be generated due to a fluctuation in power supply voltage. <P>SOLUTION: The flash memory device is provided with a memory cell array including a plurality of word lines, a plurality of bit lines and a plurality of memory cells arrayed in respective intersecting areas between these word lines and bit lines, a bit line voltage setting circuit capable of setting a bit line allowed to be connected to a memory cell to be programmed out of these bit lines to variable bit line voltage or ground voltage and a variable bit line voltage generation circuit for generating variable bit line voltage which is changed in response to the power supply voltage. When the power supply voltage is included within a prescribed range, the variable bit line voltage is linearly proportional to the power supply voltage. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
