| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a joining method of a semiconductor chip and a substrate which can endure using in high temperature of at least 300°C. <P>SOLUTION: A low fusing point metallization layer 3 which consists of any one low fusing point metal material out of tin, zinc and indium is formed on a wiring layer 13 formed of any one metal material out of copper, copper alloy and silver on a substrate 1, and the semiconductor chip 5 is stacked on the metallization layer 3. The low fusing point metallization layer 3 is made into liquid phase status at a temperature of at least fusing point of the low fusing point metal material, and fixed time duration holding is performed at a predetermined temperature while impressing predetermined pressure to the semiconductor chip and the substrate. Metal molecules of the low fusing point metallization layer 3 are diffused inside the wiring layer 13, the liquid phase is extinguished, and a bonding layer whose principal component is the metal of the wiring layer 13 is formed. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
