发明名称 TRANSISTOR EQUIPPED WITH ANNULAR GATE ELECTRODE
摘要 PROBLEM TO BE SOLVED: To provide a transistor having an annular gate electrode, which includes a connection pad connectable to a secondary gate electrode without severely influencing the transistor characteristics. SOLUTION: The transistor having an annular gate electrode includes the connection pad for the secondary gate electrode where a part of the annular gate electrode extends onto at least one of a source electrode and a drain electrode while interposing an insulating layer between the source electrode and the drain electrode. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005033073(A) 申请公布日期 2005.02.03
申请号 JP20030272211 申请日期 2003.07.09
申请人 SHARP CORP 发明人 TWYNAM JOHN K
分类号 H01L21/28;H01L21/3205;H01L21/338;H01L21/768;H01L23/52;H01L23/522;H01L29/417;H01L29/423;H01L29/812;(IPC1-7):H01L21/338;H01L21/320 主分类号 H01L21/28
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