METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress deterioration in power occurring at an electron trap caused by existence of an oxide layer containing P (phosphorus) formed on the interface of the surface of a recess and a gate electrode in a high output power FET of a compound semiconductor. SOLUTION: P is removed substantially from an oxide 115 containing P existing on the surface of a recess 114 by performing evacuation following to recess etching with the mixture etching liquid of a phosphoric acid and hydrogen peroxide water. After the evacuation, a Shottky electrode 116a is formed on the surface of the recess by deposition. COPYRIGHT: (C)2005,JPO&NCIPI