| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of measuring an accurate dissolution rate from development start time, and an analyzer therefor, as to a photoresist having a very high dissolution rate such as a chemically amplified resist. SOLUTION: In this dissolution rate measuring method for the photoresist for irradiating a photoresist face of a substrate having a photoresist layer on its surface with light to detect the dissolution rate, by measuring a change of reflected interference light intensity accompanied to the dissolution of the photoresist, the dissolution of the photoresist is carried out by a dipping method, the substrate, a light irradiation part and a photoreception part are moved synchronizedly, starting from a point before the substrate contacts with a dissolving liquid up to a desired measuring end point, and the measurement is carried out as to the same portion. COPYRIGHT: (C)2005,JPO&NCIPI |
