发明名称 Method of manufacturing semiconductor device
摘要 To enhance and/or improve reliability in a method of forming a semiconductor device. An exemplary method of forming a semiconductor device forms a conductive part within a concave portion which is formed in a first surface of a semiconductor substrate. The semiconductor substrate includes an integrated circuit. The method also thins the substrate by removing a part of a second surface of the semiconductor substrate so as to make the conductive part penetrate from the first surface to the second surface, and cuts the semiconductor substrate into pieces. An electric property of the semiconductor substrate is inspected through the conductive part after the conductive part is formed.
申请公布号 US2005026314(A1) 申请公布日期 2005.02.03
申请号 US20040898281 申请日期 2004.07.26
申请人 SEIKO EPSON CORPORATION 发明人 YAMAGUCHI KOJI
分类号 H01L21/301;H01L21/304;H01L21/3205;H01L21/66;H01L21/78;H01L23/52;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L21/301 主分类号 H01L21/301
代理机构 代理人
主权项
地址