| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a memory-cell structure for increasing the bit memory density. <P>SOLUTION: A memory cell has two anti-fuses connected in series together with at least a diode. Each anti-fuse displays the resistance different from others when the fuses are blown out. Program voltages, where each resistance value gradually increases, are required. Each anti-fuse has different shapes and materials to be so programmed that the fuses easier to blow out are used first and that the fuses more difficult to blow out are used in succession to the fuses. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
