| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a thin film for lowering concentration of impurity caused by a ligand by using a simple device. SOLUTION: The method for forming the thin film removes an excessive metal complex by purging the surface of a substrate with an inert gas after adsorbing the metal complex by intermittently supplying the metal complex on the surface of the substrate, next, intermittently supplies hydrogen gas on the surface of the substrate, removes excessive hydrogen gas by purging the surface of the substrate with the inert gas after removing the ligand of the adsorbed metal complex, thereafter, intermittently supplies oxidation gas on the surface of the substrate, and removes excessive oxidation gas by purging the surface of the substrate with the inert gas after changing the terminal group of the adsorbed metal complex into a hydroxyl group. The method forms the thin film having a prescribed film thickness by repeating the above process. COPYRIGHT: (C)2005,JPO&NCIPI
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