| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect organic transistor element, big in the degree of movement and high in ON-OFF ratio. SOLUTION: The field effect organic transistor element is constituted of a gate electrode 12 arranged on an insulating substrate 11, a gate insulating layer 13 arranged on the gate electrode, a source electrode 15 and a drain electrode 14 arranged further on the gate insulating layer 13, organic semiconductor layers 16, 17 arranged on the electrodes 15, 14, and a protective film 18 arranged at the uppermost unit. In this case, the moving degrees of the organic semiconductor layers 16, 17 are different and especially, the organic semiconductor layer 16, which serves as the channel region 19 of an electric charge movement, is higher in the degree of movement than the organic semiconductor layer 17, which will never serve as the channel region. COPYRIGHT: (C)2005,JPO&NCIPI
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