发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which is equipped with a dummy circuit element and wiring formed for using the same, wherein the dummy circuit element and the wiring are improved in availability. SOLUTION: The semiconductor device is equipped with a semiconductor substrate 1 which is provided with a main surface 1a and contains a transistor region 200 where circuit elements are relatively densely formed on the main surface 1a and a dummy pattern region where circuit elements are relatively sporadically formed, dummy transistors 10a to 10d which are located in the dummy pattern region 300 and formed on the main surface 1a, an interlayer insulating film which is provided with a top surface and formed on the main surface 1a so as to cover the dummy transistors 10a to 10d, and gate upper interconnecting lines 15a to 15d, source interconnecting lines 13a to 13d, and drain interconnecting lines 14a to 14d which are formed on the top surface of the interlayer dielectric and electrically insulated from the dummy transistors 10a to 10d, overlapping two-dimensionally with the dummy transistors 10a to 10d. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005032768(A) 申请公布日期 2005.02.03
申请号 JP20030193027 申请日期 2003.07.07
申请人 RENESAS TECHNOLOGY CORP 发明人 TSUJIHASHI KUMIKO;OKAMOTO KAZUYOSHI;HASHIZUME TAKESHI
分类号 H01L21/822;H01L21/82;H01L27/04;(IPC1-7):H01L21/822 主分类号 H01L21/822
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