发明名称 |
Double sided container capacitor for a semiconductor device and method for forming same |
摘要 |
A method for forming a double sided container capacitor comprises forming a first capacitor top plate layer within a recess in a dielectric layer, then forming a first cell dielectric on the first top plate layer. Next, first and second bottom plate layers are formed on the first cell dielectric layer, and a second cell dielectric layer is formed on the second bottom plate layers. Finally, a second top plate layer is formed on the second cell dielectric layer, and the first and second top plate layers are electrically connected using a conductive plug or conductive spacer. An inventive structure formed using the inventive method is also described.
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申请公布号 |
US2005026361(A1) |
申请公布日期 |
2005.02.03 |
申请号 |
US20030628994 |
申请日期 |
2003.07.28 |
申请人 |
GRAETTINGER THOMAS M.;PONTOH MARSELA;FIGURA THOMAS A. |
发明人 |
GRAETTINGER THOMAS M.;PONTOH MARSELA;FIGURA THOMAS A. |
分类号 |
H01L21/02;H01L21/20;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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