发明名称 |
Shallow trench filled with two or more dielectrics for isolation and coupling or for stress control |
摘要 |
A method for forming shallow trenches having different trench fill materials is described. A stop layer is provided on a substrate. A plurality of trenches is etched through the stop layer and into the substrate. A first layer is deposited over the stop layer and filling said trenches. The first layer is planarized to the stop layer leaving the first layer within the trenches. The first layer is removed from a subset of the trenches. A second layer is deposited over the stop layer and within the subset of trenches and planarized to the stop layer leaving the second layer within the subset of trenches to complete fabrication of shallow trenches having different trench fill materials. The trench fill materials may be dielectric layers having different dielectric constants or they may be a dielectric layer and a conducting layer. The method can be extended to provide three or more different trench fill materials.
|
申请公布号 |
US2005026390(A1) |
申请公布日期 |
2005.02.03 |
申请号 |
US20040936371 |
申请日期 |
2004.09.08 |
申请人 |
|
发明人 |
CHI MIN-HNA |
分类号 |
H01L21/762;H01L21/8238;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|