| 摘要 |
<p>Semiconductor devices formed in fully or partially compensated semiconductor, (substrate or epi-layer), including minimal current flow voltage switching devices with at least one Junction which is rectifying when the semiconductor is caused to be N or P-type by the presence of applied gate voltage field induced carriers, such as inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems.</p> |
