MODULE TYPE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a module type semiconductor device wherein a joint and an insulating substrate are not damaged by thermal stress even if a semiconductor element made of silicon carbide is operated at a temperature of at least 300°C. SOLUTION: An insulating ceramic substrate 1 whose coefficient of thermal expansion approaches that of the semiconductor element 3 made of silicon carbide and which uses silicon nitride (Si3N4) with high heat transfer coefficient is used for the insulating substrate to which the semiconductor element 3 made of silicon carbide is joined. COPYRIGHT: (C)2005,JPO&NCIPI