| 摘要 |
PROBLEM TO BE SOLVED: To provide an AlN semiconductor in which the manufacturing processes of a device can be reduced. SOLUTION: The AlN semiconductor includes a c-AlN single crystal film 4 having a thickness of about 1-5μm, and is formed sequentially via a c-TiC single crystal layer 2 having a thickness of about 5-50 nm and a c-TiN single crystal layer 3 having a thickness of about 1-20 nm, on a single crystal Si substrate 1. COPYRIGHT: (C)2005,JPO&NCIPI
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