| 摘要 |
PROBLEM TO BE SOLVED: To reduce a short circuit caused by scratches generated between wirings as the downsizing of a semiconductor device progresses. SOLUTION: In order to decrease short-circuited points between wirings, a second insulating film is formed and an wiring trench or a via hole is formed therein. After Cu wiring is formed by electrolytic plating or metal CMP, sputter etching is performed on the surface of a substrate by one of a rare gas, e.g. helium or argon, ammonia (NH<SB>3</SB>), methane (CH<SB>4</SB>), oxygen (O<SB>2</SB>), hydrogen (H<SB>2</SB>) or nitrogen (N<SB>2</SB>) or a mixture gas species thereof using high density plasma equipment. Since scratches resulting from metal CMP and non-polished parts are removed, the short circuit can be reduced. COPYRIGHT: (C)2005,JPO&NCIPI
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