发明名称 |
Healing of micro-cracks in an on-chip dielectric |
摘要 |
In one embodiment there is provided a method comprising performing a sawing operation on a wafer; and treating the wafer to at least reduce a propagation of micro-cracks formed in the wafer during the sawing. In another embodiment there is provided a semi-conductor die comprising a substrate having a central first portion, and a peripheral second portion around the central first portion; an integrated circuit formed on the central first portion; and a guard ring disposed between the first and second portions of the substrate to prevent a propagation of cracks found in that second portion to the first portion, wherein the second portion includes micro-cracks filled with a crack-healing material to arrest propagation of the micro-cracks beyond the guard ring and into the central first portion.
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申请公布号 |
US2005023565(A1) |
申请公布日期 |
2005.02.03 |
申请号 |
US20040900720 |
申请日期 |
2004.07.27 |
申请人 |
TOWLE STEVEN N.;GEORGE ANNA M. |
发明人 |
TOWLE STEVEN N.;GEORGE ANNA M. |
分类号 |
H01L21/312;H01L21/46;H01L21/78;H01L23/544;H01L27/10;H01L29/74;H01L31/111;(IPC1-7):H01L27/10 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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