发明名称 Healing of micro-cracks in an on-chip dielectric
摘要 In one embodiment there is provided a method comprising performing a sawing operation on a wafer; and treating the wafer to at least reduce a propagation of micro-cracks formed in the wafer during the sawing. In another embodiment there is provided a semi-conductor die comprising a substrate having a central first portion, and a peripheral second portion around the central first portion; an integrated circuit formed on the central first portion; and a guard ring disposed between the first and second portions of the substrate to prevent a propagation of cracks found in that second portion to the first portion, wherein the second portion includes micro-cracks filled with a crack-healing material to arrest propagation of the micro-cracks beyond the guard ring and into the central first portion.
申请公布号 US2005023565(A1) 申请公布日期 2005.02.03
申请号 US20040900720 申请日期 2004.07.27
申请人 TOWLE STEVEN N.;GEORGE ANNA M. 发明人 TOWLE STEVEN N.;GEORGE ANNA M.
分类号 H01L21/312;H01L21/46;H01L21/78;H01L23/544;H01L27/10;H01L29/74;H01L31/111;(IPC1-7):H01L27/10 主分类号 H01L21/312
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