发明名称 USE OF A SEMICONDUCTOR PROBE WITH RESISTIVE TIP AND METHOD OF FABRICATING THE SAME
摘要 Provided are a semiconductor probe having a resistive tip, a method of fabricating the semiconductor probe, and a method of recording and reproducing information using the semiconductor probe. The semiconductor probe includes a tip and a cantilever. The tip is doped with first impurities. The cantilever has an end portion on which the tip is positioned. The tip includes a resistive area, and first and second semiconductor electrode areas. The resistive area is positioned at the peak of the tip and lightly doped with second impurities that are different from the first impurities. The first and second semiconductor electrode areas are heavily doped with the second impurities and contact the resistive area.
申请公布号 EP1502296(A1) 申请公布日期 2005.02.02
申请号 EP20030721131 申请日期 2003.05.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, HONG-SIK;SHIN, HYUN-JUNG;JUNG, JU-HWAN
分类号 G01Q70/16;G11B9/14;G01Q60/48;G11B9/00;G11B9/02;G11B11/08;H01L21/66;(IPC1-7):H01L21/66 主分类号 G01Q70/16
代理机构 代理人
主权项
地址