| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve space margin and overlay margin between trench-type conductive patterns by forming a nitride layer as an etch stop layer before forming a trench. CONSTITUTION: A first insulating layer(22) and an etch stop layer(23) made of a nitride layer are sequentially formed on a substrate(21). A trench is then formed by etching the etch stop layer and the first insulating layer using a photoresist pattern as a mask. The photoresist pattern is removed. A conductive layer is filled in the trench. By CMP of the conductive layer to expose the etch stop layer, a trench-type conductive pattern(25) is formed. A second insulating layer(26) is formed on the resultant structure. A via hole(27) is formed to expose the conductive pattern by etching the second insulating layer.
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