METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE WITH LAMINATED DIELECTRIC FILM OF Hf02-Al2O3 USING PE-ALD

摘要

PURPOSE: A method for forming a capacitor of a semiconductor device is provided to improve productivity and reliability of dielectric deposition processing by forming a laminated dielectric film of HfO2-Al2O3 in a single chamber using PE-ALD(Plasma Enhanced Atomic Layer Deposition). CONSTITUTION: A storage node oxide layer is formed on a silicon substrate(31) having a contact plug(37). A storage node contact hole is formed to expose the contact plug by selectively etching the storage node oxide layer. A storage node electrode(43a) is formed in the storage node contact hole. After the remaining storage node oxide layer is removed, a laminated dielectric film(45) of HfO2-Al2O3 is formed on the storage node electrode by PE-ALD. Then, an upper electrode is formed on the dielectric film.